smd type smd type 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 1. gate 2. source 3. drain features v ds (v) = 20v i d =4.2a(v gs =4.5v) r ds(on) 50m (v gs =4.5v) r ds(on) 63m (v gs =2.5v) r ds(on) 87m (v gs =1.8v) absolute maximum ratings ta = 25 parameter symbol rating unit drain-source voltage v ds 20 v gate-source voltage v gs 8 v continuous drain t a =25 4.2 current *1 t a =70 3.2 pulsed drain current *2 i dm 15 power dissipation *1 t a =25 1.4 t a =70 0.9 themal resistance.junction-to-ambient *1 r thja 125 /w themal resistance.junction-to-case r thjc 80 /w junction and storage temperature range t j ,t stg -55to150 *1the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25 i d p d a w ko3414 (AO3414) smd type ic smd type transistors product specification 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com
smd type ic smd type mosfet electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-source breakdown voltage v dss i d =250a, v gs =0v 20 v v ds =16v, v gs =0v 1 v ds =16v, v gs =0v ,t j =55 5 gate-body leakage current i gss v ds =0v, v gs = 8v 100 na gate threshold voltage v gs(th) v ds =v gs i d =250a 0.4 0.6 1 v v gs =4.5v, i d =4.2a 41 50 v gs =4.5v, i d =4.2a t j =125 58 70 v gs =2.5v, i d =3.7a 52 63 v gs =1.8v, i d =3.2a 67 87 on state drain current i d(on) v gs =4.5v, v ds =5v 15 a forward transconductance g fs v ds =5v, i d =4.2a 11 s input capacitance c iss 436 pf output capacitance c oss 66 pf reverse transfer capacitance c rss 44 pf gate resistance r g v gs =0v, v ds =0v, f=1mhz 3 total gate charge q g 6.2 nc gate source charge q gs 1.6 nc gate drain charge q gd 0.5 nc turn-on delaytime t d(on) 5.5 ns turn-onrisetime t r 6.3 ns turn-off delaytime t d(off) 40 ns turn-off falltime t f 12.7 ns body diode reverse recovery time t rr i f =4a, d i /d t =100a/ s 12.3 ns body diode reverse recovery charge q rr i f =4a, d i /d t =100a/ s 3.5 nc maximum body-diode continuous current i s 2a diode forward voltage v sd i s =1a,v gs =0v 0.76 1 v a v gs =0v, v ds =-10v, f=1mhz v gs =4.5v, v ds = =10v, i d =4.2a m v gs =4.5v, v ds =10v, r l =2.7,r gen =6 r ds(on) static drain-source on-resistance i dss zero gate voltage drain current smd type smd type ko3414 (AO3414) smd type ic smd type transistors product specification 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com
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